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| Datasheet File OCR Text: |
| PROCESS CPD77 Schottky Rectifier 3.0A Schottky Barrier Rectifier Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 61 x 61 MILS 9.8 MILS 55 x 55 MILS Ti/Ag - (2,500A/30,000A) Ti/Ni/Au - (1,600A/5,550A/1,500A) GEOMETRY GROSS DIE PER 4 INCH WAFER 3,118 PRINCIPAL DEVICE TYPES CTLSH3-30M833 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (02 -March 2006) |
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